unit: mm sod-323 1.7 +0.1 -0.1 2.6 +0.1 -0.1 1 . 3 + 0 . 1 - 0 . 1 0 . 1 + 0 . 0 5 - 0 . 0 2 0.475 0.375 0 . 3 + 0 . 0 5 - 0 . 0 5 0.85 +0.05 -0.05 1.0max ba p13 21-03 features high vo ltage, c urr ent controlled rf resist or for rf attenuators and switches low diode capacitanc e low diode forw ard re sis tance very low s eries inductance for applications up t o 3 ghz. absolute maxim um ratings t a = 25 paramet er sym bol rating unit continuo us rever se voltage v r 60 v continuo us f orw ard curre nt i f 100 m a total pow er dissi pation t s = 90 p tot 500 m w storage tem pera ture t stg -65 to +150 junct ion tem pera ture t j 150 thermal resist ance from junct ion to s older ing point r th( j-s) 120 /w product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com 4008-318-123
el ectrical characteristics t a = 2 5 parameter sym bol test c onditons min typ ma x unit forw ard v oltage v f i f = 50 m a 0.95 1.1 v rev erse current i r v r = 60 v 100 na v r = 0; f = 1 mh z 0.4 pf v r = 1 v ; f = 1 mhz 0.35 0.45 pf v r = 20 v; f = 1 mhz 0.25 0.32 pf i f = 0.5 m a; f = 100 m hz 3.4 5 i f = 1 m a; f = 100 m hz 2.4 3.6 i f = 10 m a; f = 100 m hz 1.2 1.8 i f = 100 m a; f = 100 m hz 0.85 1.3 v r = 0; f = 900 m hz 16.6 db v r = 0; f = 1800 mhz 11.6 db v r = 0; f = 2450 mhz 9.2 db v r = 0.5m a; f = 900 m hz 0.26 db v r = 0.5m a; f = 1800 mhz 0.35 db v r = 0.5m a; f = 2450 mhz 0.44 db v r = 1m a; f = 900 m hz 0.2 db v r = 1m a; f = 1800 mhz 0.29 db v r = 1m a; f = 2450 mhz 0.38 db v r = 10m a; f = 900 m hz 0.13 db v r = 10m a; f = 1800 mhz 0.22 db v r = 10m a; f = 2450 mhz 0.32 db v r = 100m a; f = 900 m hz 0.1 db v r = 100m a; f = 1800 mhz 0.2 db v r = 100m a; f = 2450 mhz 0.29 db charge carrie r life t im e w hen sw itc hed from i f = 10 m a to i r = 6 m a; r l = 100 ; m easured at i r = 3 m a 0.5 s series induct ance l s i f = 100 m a; f = 100 m hz 1.5 nh insertion loss |s 21 | 2 insertion loss |s 21 | 2 insertion loss |s 21 | 2 isolation |s 21 | 2 insertion loss |s 21 | 2 cd diode c apacitance r d diode forw ard re sis tance mark ing mar king v8 t l ba p13 21-03 product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com 4008-318-123
t y pical ch aracteristics handbook, halfpage 10 1 10 - 1 10 - 1 1 i f (ma) r d ( w ) 10 10 2 t j =25 c; f = 100 mhz. handbook, halfpage 020 500 0 100 200 300 400 4 c d (ff) v r (v) 81216 t j =25 c; = 1 mhz. fig.1 forward resistance as a function of the forward current; typical values. fig.2 diode capacitance as a function of reverse voltage; typical values. handbook, halfpage 01 f (ghz) 3 0 - 0.2 - 0.6 - 0.8 - 0.4 2 s 21 2 ( db ) (1) (2) (3) (4) (1) i f = 100 ma. (2) i f =10ma. (3) i f = 1 ma. (4) i f = 0.5 ma. diode inserted in series with a 50 w stripline circuit and biased via the analyzer tee network. t amb =25 c. handbook, halfpage 01 f (ghz) 3 0 - 10 - 30 - 40 - 20 2 s 21 2 ( db ) diode zero biased and inserted in series with a 50 w stripline circuit. t amb =25 c. fig.3 insertion loss ( ) of the diode in on-state | s 21 | 2 as a function of frequency; typical values. fig.4 isolation ( ) of the diode in off-state as a | s 21 | 2 function of frequency; typical values. ba p13 21-03 product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com 4008-318-123
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